Paper
25 February 2010 Properties of mid-IR diodes with n-InAsSbP/n-InAs interface
B. A. Matveev, A. V. Ankudinov, N. V. Zotova, S. A. Karandashev, T. V. L'vova, M. A. Remennyy, A. Yu. Rybal'chenko, N. M. Stus'
Author Affiliations +
Abstract
IR imaging (2D radiation mapping) of forward biased point contact LEDs based on p-InAsSbP/n-InAs/n-InAsSbP DHs and p-InAsSbP/n-InAs SHs revealed differences in current crowding effect that was attributed to the properties of isotype n-InAsSbP/n-InAs barrier. 2D radiation distribution has been used for determination of L-I and I-V characteristics that are not distorted by the current crowding. The existence of the n-InAsSbP/n-InAs barrier was also traced in AFM and C-V measurements.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. A. Matveev, A. V. Ankudinov, N. V. Zotova, S. A. Karandashev, T. V. L'vova, M. A. Remennyy, A. Yu. Rybal'chenko, and N. M. Stus' "Properties of mid-IR diodes with n-InAsSbP/n-InAs interface", Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 75970G (25 February 2010); https://doi.org/10.1117/12.841625
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Cited by 7 scholarly publications.
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KEYWORDS
Light emitting diodes

Heterojunctions

Interfaces

Diodes

Infrared imaging

Infrared radiation

Mid-IR

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