Electron-photon and electron-LO phonon intersubband scattering rates in GaN/AlN quantum wells

Guangyu Liu; Hongping Zhao; Nelson Tansu

doi:10.1117/12.843054

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25 February 2010 Electron-photon and electron-LO phonon intersubband scattering rates in GaN/AlN quantum wells

Guangyu Liu, Hongping Zhao, Nelson Tansu

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Proceedings Volume 7597, Physics and Simulation of Optoelectronic Devices XVIII; 75971K (2010) https://doi.org/10.1117/12.843054
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

In this work, we analyze and optimize the GaN / AlN coupled quantum well design with and without polarization for achieving intersubband transition wavelength at 1.55 μm to serve as quantum cascade lasers (QCL) active region. The computations of the electron-LO phonon and electron-photon scattering rates were carried out to optimize the gain media design for intersubband quantum well (QW) lasers. The AlN / GaN coupled QW structure leads to improved design in optimizing the intersubband transition, in comparison to that of single stage GaN / AlN QW structure. The comparison between polar and non-polar coupled QW results in different characteristics in various scattering rates, which in turn leads to different intersubband gain.

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Guangyu Liu, Hongping Zhao, and Nelson Tansu "Electron-photon and electron-LO phonon intersubband scattering rates in GaN/AlN quantum wells", Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 75971K (25 February 2010); https://doi.org/10.1117/12.843054

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