Translator Disclaimer
25 February 2010 Blue-emitting ZnSe random laser
Author Affiliations +
Abstract
We demonstrate a blue-emitting semiconductor random laser using a thin ZnSe powered film at room and low temperatures. Below the threshold excitation, we observe a broad spontaneous emission band centered at ~470 nm due to the excitonic transitions in ZnSe particles. Above the threshold excitation, several discrete lasing lines caused by the light amplification in closed-loop paths and emitted in all directions were observed near the center of the spontaneous emission band (~475 nm). The linewidth of each discrete lasing line is less than 0.4 nm. Lasing threshold power density is determined to be ~700 kW/cm2. The effective cavity diameter Deff is also estimated to be ~6 μm from the experimental lasing spectrum by performing Fourier transform analysis. The temperature dependence of the lasing characteristics in ZnSe random laser is also investigated and found that decreasing temperature shifts the discrete lasing lines toward higher-energy side with increasing their intensities.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toru Takahashi, Toshihiro Nakamura, and Sadao Adachi "Blue-emitting ZnSe random laser", Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 75971T (25 February 2010); https://doi.org/10.1117/12.847278
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

White random lasing in mixture of ZnSe, CdS and CdSSe...
Proceedings of SPIE (March 15 2016)
Random lasing in nanocrystalline ZnO powders
Proceedings of SPIE (February 25 2010)
Mode selectivity of random lasing in one-dimensional model
Proceedings of SPIE (February 13 2007)
Mie theory and its application in probe of cloud droplet
Proceedings of SPIE (January 27 2009)
Lasing in disordered media
Proceedings of SPIE (July 02 2003)

Back to Top