25 February 2010 Numerical simulation on high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells
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Abstract
In this paper, the high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells are investigated numerically by using the APSYS simulation program. The solar cell structure used as a reference was based on a published article by Geisz et al. (Appl. Phys. Lett. 91, 023502, 2007). By optimizing the layer thickness of the top and middle cells, the appropriate solar cell structure which possesses high sunlight-to-energy conversion efficiency is recommended. At AM1.5G and one sun, the conversion efficiency is improved by 2.3%. At AM0 and one sun, the conversion efficiency is improved by 4.2%. At AM1.5D and one sun, the conversion efficiency is improved by 1.3%. Furthermore, based on the optimized structures, this device can achieve efficiencies of more than 40% at high concentrations. For the triple-junction solar cell under AM1.5G solar spectrum, the conversion efficiency reaches 40.2% at 40 suns. For the device under AM0 solar spectrum, the conversion efficiency reaches 36.2% at 30 suns. For the device under AM1.5D solar spectrum, the conversion efficiency reaches 40.2% at 50 suns.
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Shu-Hsuan Chang, Shu-Hsuan Chang, Miao-Chan Tsai, Miao-Chan Tsai, Sheng-Horng Yen, Sheng-Horng Yen, Shu-Jeng Chang, Shu-Jeng Chang, Yen-Kuang Kuo, Yen-Kuang Kuo, } "Numerical simulation on high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells", Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 759721 (25 February 2010); doi: 10.1117/12.841270; https://doi.org/10.1117/12.841270
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