25 February 2010 Modeling and simulation of AlGaAs/GaAs QW DBR silicon dual junction photovoltaic devices
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This paper investigates the validation and design of a new high efficiency photovoltaic cell through modeling and simulation. The goal of this article is present the absorption and recombination-generation model of the simulation program for the current-voltage analysis and optimization of MQW's AlGaAs/GaAs solar cells. In an ideal device structure, an efficiency as high as 45% can be achieved by combining a standard silicon single-crystalline cell with a GaAs/AlGaAs multi-QW structure enclosed in a light-confining structure such AlGaAs/GaAs DBR. The predicted efficiency and the analysis is for an ideal crystalline cell, which does not include shadowing effects, reflection and recombination of minority carriers. This combination makes maximum use of the absorption in the silicon and the addition of GaAs QW and selective reflector between the two junction devices boost the efficiency A possible practical design implementation is the use of a transparent contact between the two cells such as ITO and the wafer bonding of the two cells.
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Hamid Z. Fardi, Hamid Z. Fardi, Bart Van Zeghbroeck, Bart Van Zeghbroeck, "Modeling and simulation of AlGaAs/GaAs QW DBR silicon dual junction photovoltaic devices", Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 759723 (25 February 2010); doi: 10.1117/12.842719; https://doi.org/10.1117/12.842719

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