25 February 2010 Back-thinned CMOS sensor optimization
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Proceedings Volume 7598, Optical Components and Materials VII; 759813 (2010) https://doi.org/10.1117/12.852389
Event: SPIE OPTO, 2010, San Francisco, California, United States
Back-thinning of a CCD image sensor is a very well established process for achieving high quantum efficiency and the majority of high-specification space and science applications have used such back-thinned devices for many years. CMOS sensors offer advantages over CCDs for a number of these applications and, in principle, it should be possible to back-thin CMOS devices and obtain the same performance as the CCD. This has now been demonstrated by e2v and results from two recent programmes to back-thin CMOS sensors show excellent quantum efficiency values.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul Jerram, Paul Jerram, David Burt, David Burt, Neil Guyatt, Neil Guyatt, Vincent Hibon, Vincent Hibon, Joel Vaillant, Joel Vaillant, Yann Henrion, Yann Henrion, "Back-thinned CMOS sensor optimization", Proc. SPIE 7598, Optical Components and Materials VII, 759813 (25 February 2010); doi: 10.1117/12.852389; https://doi.org/10.1117/12.852389


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