25 February 2010 Back-thinned CMOS sensor optimization
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Proceedings Volume 7598, Optical Components and Materials VII; 759813 (2010) https://doi.org/10.1117/12.852389
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
Back-thinning of a CCD image sensor is a very well established process for achieving high quantum efficiency and the majority of high-specification space and science applications have used such back-thinned devices for many years. CMOS sensors offer advantages over CCDs for a number of these applications and, in principle, it should be possible to back-thin CMOS devices and obtain the same performance as the CCD. This has now been demonstrated by e2v and results from two recent programmes to back-thin CMOS sensors show excellent quantum efficiency values.
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Paul Jerram, Paul Jerram, David Burt, David Burt, Neil Guyatt, Neil Guyatt, Vincent Hibon, Vincent Hibon, Joel Vaillant, Joel Vaillant, Yann Henrion, Yann Henrion, "Back-thinned CMOS sensor optimization", Proc. SPIE 7598, Optical Components and Materials VII, 759813 (25 February 2010); doi: 10.1117/12.852389; https://doi.org/10.1117/12.852389
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