25 February 2010 Direct surface relief formation in As-S(Se) layers
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Proceedings Volume 7598, Optical Components and Materials VII; 75981H (2010) https://doi.org/10.1117/12.837604
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
The process of holographic recording based on a direct formation of periodic surface relief in AsxSe1-x (0 ≤ x ≤ 0.5) and As2S3 layers was investigated by in situ AFM depth profiling and compared with data on diffraction efficiency η of the similar relief holographic gratings, measured in a reflection mode. It is established, that the time (exposure) dependence of η has at least two components, which are connected with different components of the surface deformation Δd and relief formation up to the giant, Δd/d >10% changes in the best As0.2Se0.8 or As2S3 compositions. Correlation is found between light and e-beam induced surface deformations during recording in similar compositions. Applications for prototyping phase-modulated optoelectronic elements are considered.
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M. Trunov, P. Lytvyn, P. M. Nagy, Cs. Cserhati, I. Charnovich, S. Kokenyesi, "Direct surface relief formation in As-S(Se) layers", Proc. SPIE 7598, Optical Components and Materials VII, 75981H (25 February 2010); doi: 10.1117/12.837604; https://doi.org/10.1117/12.837604
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