1 March 2010 Electronic dynamics due to exchange interaction with holes in GaAs
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Abstract
We present an investigation of electron-spin dynamics in p-doped bulk GaAs due to the electron-hole exchange interaction, aka the Bir-Aronov-Pikus mechanism. We discuss under which conditions a spin relaxation times for this mechanism is, in principle, accessible to experimental techniques, in particular to 2-photon photoemission, but also Faraday/Kerr effect measurements. We give numerical results for the spin relaxation time for a range of p-doping densities and temperatures. We then go beyond the relaxation time approximation and calculate numerically the spin-dependent electron dynamics by including the spin-flip electron-hole exchange scattering and spin-conserving carrier Coulomb scattering at the level of Boltzmann scattering integrals. We show that the electronic dynamics deviates from the simple spin-relaxation dynamics for electrons excited at high energies where the thermalization does not take place faster than the spin relaxation time. We also present a derivation of the influence of screening on the electron-hole exchange scattering and conclude that it can be neglected for the case of GaAs, but may become important for narrow-gap semiconductors.
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Hans Christian Schneider, Michael Krauß, "Electronic dynamics due to exchange interaction with holes in GaAs", Proc. SPIE 7600, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, 76001D (1 March 2010); doi: 10.1117/12.842193; https://doi.org/10.1117/12.842193
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