1 March 2010 Terahertz radiation emission from silicon and magnesium doped indium nitride
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Abstract
Indium nitride (InN) is a recently discovered source of broadband terahertz (THz) frequency radiation. Emission of THz-radiation occurs upon irradiation of InN with femtosecond (fs) near-infrared laser (nir) pulses. As a narrow band gap semiconductor, InN is an exciting material for future time-domain THz-spectroscopy and THz-imaging systems powered by femtosecond fiber lasers operating at communication wavelengths (1550nm) and directly diode-laser pumped femtosecond solid state lasers emitting in the 1000-1600nm wavelengths range. Advantages of InN as THz-emitter are strong intrinsic electric fields, potentially low intrinsic carrier concentrations and a very low probability of intervalley scattering of photocarriers. Recent results on the impact of n- and p-type dopants on THz-radiation emission from InN thin films are discussed. Emission of THz-radiation from silicon (Si) -doped and native n-type InN increases with mobility as expected for transient photocurrents as primary mechanism of terahertz radiation emission. Doping of InN with magnesium (Mg) enhances the emission of THz-radiation compared to doping of InN with Si. This is experimental evidence for Mg acting as an electrically active acceptor in InN. THz- radiation emission from InN:Si is weaker than emission of THz-radiation from native n-type InN because of increased electron concentrations due to Si being an electrically active donor in InN.
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Ingrid Wilke, Ingrid Wilke, } "Terahertz radiation emission from silicon and magnesium doped indium nitride", Proc. SPIE 7600, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, 76001V (1 March 2010); doi: 10.1117/12.840383; https://doi.org/10.1117/12.840383
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