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10 March 2010 Growth of self-standing GaN substrates
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Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 760202 (2010) https://doi.org/10.1117/12.836337
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
Large-sized and high-quality free standing GaN are required with the development of GaN-based devices. We have developed new techniques to reduce the price of GaN substrates. In this paper, we introduce a simple fabrication way of freestanding GaN substrate using hydride vapor phase epitaxy (HVPE). An evaporable buffer layer was applied for the fabrication of 2inch freestanding GaN to separate from a sapphire substrate, in other words, a freestanding GaN was fabricated only by HVPE (one-stop process) without any process.
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Hyun-Jae Lee, Katsushi Fujii, Takenari Goto, Chinkyo Kim, Jiho Chang, Soon-Ku Hong, Meoungwhan Cho, and Takafumi Yao "Growth of self-standing GaN substrates", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760202 (10 March 2010); https://doi.org/10.1117/12.836337
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