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Semipolar nitrogen terminated (1-101)GaN film was grown on a patterned (001)Si substrate using selective area metal
organic vapor phase epitaxy. By using a high temperature grown AlN buffer layer upon oblique (111) Si facets on the
substrate, we achieved a GaN crystal film with low dislocation density. Because the growth of GaN crystal was selforganized
on the facets, we achieved two dimensional growth mode automatically, and the surface roughness was as
small as 0.2nm. Incorporation of magnesium (Mg) and carbon (C) in the (1-101) GaN was studied extensively. It was
found that the Mg doping efficiency is superior on (1-101) face to that on (0001) face. In case of C doping, a shallow
acceptor level was generated in (1-101) face and p-type conduction was realized.
N. Sawaki,Y. Honda,T. Hikosaka,S. Tanaka,M. Yamaguchi,N. Koide, andK. Tomita
"Selective growth and impurity incorporation in semipolar GaN grown on Si substrate", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760203 (10 March 2010); https://doi.org/10.1117/12.840460
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N. Sawaki, Y. Honda, T. Hikosaka, S. Tanaka, M. Yamaguchi, N. Koide, K. Tomita, "Selective growth and impurity incorporation in semipolar GaN grown on Si substrate," Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760203 (10 March 2010); https://doi.org/10.1117/12.840460