10 March 2010 Selective growth and impurity incorporation in semipolar GaN grown on Si substrate
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Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 760203 (2010) https://doi.org/10.1117/12.840460
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
Semipolar nitrogen terminated (1-101)GaN film was grown on a patterned (001)Si substrate using selective area metal organic vapor phase epitaxy. By using a high temperature grown AlN buffer layer upon oblique (111) Si facets on the substrate, we achieved a GaN crystal film with low dislocation density. Because the growth of GaN crystal was selforganized on the facets, we achieved two dimensional growth mode automatically, and the surface roughness was as small as 0.2nm. Incorporation of magnesium (Mg) and carbon (C) in the (1-101) GaN was studied extensively. It was found that the Mg doping efficiency is superior on (1-101) face to that on (0001) face. In case of C doping, a shallow acceptor level was generated in (1-101) face and p-type conduction was realized.
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N. Sawaki, Y. Honda, T. Hikosaka, S. Tanaka, M. Yamaguchi, N. Koide, K. Tomita, "Selective growth and impurity incorporation in semipolar GaN grown on Si substrate", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760203 (10 March 2010); doi: 10.1117/12.840460; https://doi.org/10.1117/12.840460
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