12 March 2010 The comprehensive characteristics of quaternary AlInGaN with various TMI molar rate
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Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 76020B (2010) https://doi.org/10.1117/12.840824
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
We demonstrated very thick (~400 nm) AlInGaN quaternary alloy grown on GaN epilayer by MOCVD. The Optical, electronic, crystalline quality and surface morphology of AlInGaN/GaN hetero structures with various TMI molar flow rate were be extensively discussed. With Al0.89In0.02GaN/GaN fully lattice matched structure, less and small V-defect pits and good crystal quality comparing with the other lattice mismatched AlInGaN/GaN hetero-structures were discovered. Finally, the difference AlInGaN quaternary epilayers could be directly applied to high power LED structure in the future by the same barrier growth conditions.
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Sheng-Fu Yu, Shoou-Jinn Chang, Sheng-Po Chang, Ray-Ming Lin, "The comprehensive characteristics of quaternary AlInGaN with various TMI molar rate", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76020B (12 March 2010); doi: 10.1117/12.840824; https://doi.org/10.1117/12.840824
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