12 March 2010 Ammonothermal growth of GaN substrates
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Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 76020C (2010) https://doi.org/10.1117/12.842539
Event: SPIE OPTO, 2010, San Francisco, California, United States
In this paper some physical and chemical basis of ammonothermal method of bulk gallium nitride synthesis in ammonobasic route. Excellent structural and wide spectrum of electrical parameters of truly bulk GaN crystals obtained this way are revealed. In considered crystals a low dislocation density (5 x 103 - 5 x 104 cm-2) is attainable. At the same time the crystal lattice is extremely flat and the rocking curve is very narrow (FWHM=16 arcsec). Both polar and nonpolar ammonothermal GaN substrates enabled to grow high optical quality, strain-free homoepitaxial layers
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R. Dwiliński, R. Dwiliński, R. Doradziński, R. Doradziński, J. Garczyński, J. Garczyński, L. Sierzputowski, L. Sierzputowski, R. Kucharski, R. Kucharski, M. Zajac, M. Zajac, M. Rudziński, M. Rudziński, W. Strupiński, W. Strupiński, J. Serafińczuk, J. Serafińczuk, R. Kudrawiec, R. Kudrawiec, "Ammonothermal growth of GaN substrates", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76020C (12 March 2010); doi: 10.1117/12.842539; https://doi.org/10.1117/12.842539


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