10 March 2010 Plasmon-assisted dissipation of LO-mode heat in nitride 2DEG channels
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Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 76020H (2010) https://doi.org/10.1117/12.843659
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
A bottleneck for heat dissipation is discussed in terms of plasmon-assisted decay of nonequilibrium longitudinal optical phonons launched by hot electrons. According to experiment at low and moderate electric fields, the fastest decay takes place at electron density of ~6.7×1012 cm-2 and ~2.7×1012 cm-2 for heterostructures with 2DEG channels located in GaN and GaInAs, respectively. Hot-electron temperature and gate voltage can be used to shift the optimal density. A GaN-based heterostructure field effect transistor degrades slower when dissipation of the LO-mode heat is faster.
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Arvydas Matulionis, Arvydas Matulionis, Juozapas Liberis, Juozapas Liberis, Hadis Morkoç, Hadis Morkoç, } "Plasmon-assisted dissipation of LO-mode heat in nitride 2DEG channels", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76020H (10 March 2010); doi: 10.1117/12.843659; https://doi.org/10.1117/12.843659
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