12 March 2010 Quantum 1/f noise theory and experiment in QWIPs
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Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 76020L (2010) https://doi.org/10.1117/12.842919
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
The dark current of Quantum Well Inter-subband Photodetectors is known to be affected by quantum 1/f noise. This limits the detectivity. This paper compares various experimental 1/f noise measurements in QWIPs with the prediction of the conventional quantum 1/f noise expression for GaN/AlGaN QWIPs. Both the collisionless and collision-dominated cases are considered. The elementary process causing the dark current is the transfer of an electron from one well to the neighboring well. This happens under the influence of the applied electric field, and has in general both thermally activated and tunneling components. The larger the applied electric field, the larger is the squared velocity change of the carriers, and the larger is the obtained conventional quantum 1/f effect. The detectivity of the devices is calculated on this basis. The results are compared with measurements of 1/f noise in QWIPs by J. Jiang6, C. Jelen7, and M. C. Hsu8, and the agreement is good.
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Amanda M Truong, Amanda M Truong, Peter H. Handel, Peter H. Handel, } "Quantum 1/f noise theory and experiment in QWIPs", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76020L (12 March 2010); doi: 10.1117/12.842919; https://doi.org/10.1117/12.842919
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