Nano-ultrasonic based on GaN nano-layers

Chi-Kuang Sun; Yu-Chieh Wen; Yi-Hsin Chen; Kung-Hsuan Lin

doi:10.1117/12.840826

12 March 2010 Nano-ultrasonic based on GaN nano-layers

Chi-Kuang Sun, Yu-Chieh Wen, Yi-Hsin Chen, Kung-Hsuan Lin

Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 76020Q (2010) https://doi.org/10.1117/12.840826
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

We review our current development on nano-ultrasonic by using piezoelectric nano-layers based on the GaN material system. Our study indicated that piezoelectric semiconductor nanostructures can serve as optical piezoelectric transducers to generate and detect nanoacoustic waves through the piezoelectric effect. The nanoacoustic waves, with a wavelength on the order of or shorter than 10 nm, can be used for high accuracy THz electron control, noninvasive subnanometer interface probing, and nano-ultrasonic imaging. Detailed design principles and the applications to the study of lattice/molecular dynamics in condense matters are discussed.

Citation Download Citation

Chi-Kuang Sun, Yu-Chieh Wen, Yi-Hsin Chen, and Kung-Hsuan Lin "Nano-ultrasonic based on GaN nano-layers", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76020Q (12 March 2010); https://doi.org/10.1117/12.840826

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