12 March 2010 Thermal conductivity measurement of pulsed-MOVPE InN alloy grown on GaN/Sapphire by 3ω method
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Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 76020U (2010) https://doi.org/10.1117/12.842509
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
The thermal conductivity of high-quality narrow-bandgap (0.77eV) InN grown on GaN on sapphire substrate by pulsed- MOVPE method was measured and analyzed. To accurately extract the thermal conductivities of GaN and InN films grown on sapphire substrate, 2D multilayer thermal diffusion model and extended 3ω slope technique are employed. The thermal conductivity of sapphire substrate measured is 41 W/(mK). The thermal conductivity of undoped GaN film is measured as 108 W/(mK). High-quality pulsed-MOVPE grown InN film exhibits thermal conductivity of 126 W/(mK), which is higher in comparison to the previously-reported value of porous InN ceramics 45 W/(mK), yet lower than the theoretical value 176 W/(mK) based on phonon scattering.
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Hua Tong, Jing Zhang, Hongping Zhao, Guangyu Liu, Vincent A. Handara, Juan A. Herbsommer, Nelson Tansu, "Thermal conductivity measurement of pulsed-MOVPE InN alloy grown on GaN/Sapphire by 3ω method", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76020U (12 March 2010); doi: 10.1117/12.842509; https://doi.org/10.1117/12.842509
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