Achieving p-InxGa1-xN alloys with high In contents

B. N Pantha; A. Sedhain; J. Li; J. Y. Lin; H. X. Jiang

doi:10.1117/12.842313

16 March 2010 Achieving p-In_xGa1_-xN alloys with high In contents

B. N Pantha, A. Sedhain, J. Li, J. Y. Lin, H. X. Jiang

Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 76020Z (2010) https://doi.org/10.1117/12.842313
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Mg-doped In_xGa_1-xN alloys were grown by metal organic chemical vapor deposition (MOCVD) on semi-insulating c-GaN/sapphire templates. Hall effect measurements showed that Mg-doped In_xGa_1-xN epilayers are p-type for x up to 0.35. Mg-acceptor levels (E_A) as a function of x, (x up to 0.35), were experimentally evaluated from the temperature dependent hole concentration. The observed E_A in Mg-doped In_0.35Ga_0.65N alloys was about 43 meV, which is roughly 4 times smaller than that of Mg doped GaN. A room temperature resistivity as low as 0.4 Ωcm (with a hole concentration ~5 10¹⁸ cm^-3 and hole mobility ~3 cm²/Vs) was obtained in Mg-doped In_0.22Ga_0.78N. It was observed that the photoluminescence (PL) intensity associated with the Mg related emission line decreases exponentially with x. The Mg energy levels in InGaN alloys obtained from PL measurements are consistent with those obtained from Hall-effect measurements.

Citation Download Citation

B. N Pantha, A. Sedhain, J. Li, J. Y. Lin, and H. X. Jiang "Achieving p-In_xGa1_-xN alloys with high In contents", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76020Z (16 March 2010); https://doi.org/10.1117/12.842313

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