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17 March 2010 Extended defects in nitride layers, influence on the quantum wells and quantum dots
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Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 760212 (2010) https://doi.org/10.1117/12.842490
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
For almost two decades, extensive research has been carried out on wurtzite nitride semiconductors due to their large direct band gap which offer the possibility to produce optoelectronic devices from the infrared (InN) to the ultraviolet range (GaN and AlN). The reduction of the defect densities and polarisation effects in nitride heterostructures are still challenges for the production of efficient light emitting diodes and lasers past the green range. In this contribution, the structure of the extended defects is reviewed, and their possible interaction with quantum wells and quantum dots is discussed. The presence of threading dislocations is shown to constitute a driving force for clustering. Inside semipolar layers, the glide planes are not available for the spreading of perfect dislocations, this results in the formation of a more complex defect system which we have investigated in the case of (11-22) layers.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Ruterana, M. P. Chauvat, Y. Arroyo Rojas Dasilva, H. Lei, L. Lahourcade, and E. Monroy "Extended defects in nitride layers, influence on the quantum wells and quantum dots", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760212 (17 March 2010); https://doi.org/10.1117/12.842490
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