17 March 2010 Performance improvement of InGaN-based laser diodes by epitaxial layer structure design
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Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 760219 (2010) https://doi.org/10.1117/12.842334
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
Blue laser diode (LD) structures with GaN waveguide layers and with In0.03Ga0.97N waveguide layers were grown. A comparison study showed In0.03Ga0.97N waveguide layers significantly enhance the LD performance. The mechanism behind this was investigated using reciprocal space mapping of X-ray diffraction and time-resolved cathodoluminescence measurements. Room-temperature lasing of laser diodes at 454.6 nm was realized for LD structure with In0.03Ga0.97N waveguide layers.
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Jianping Liu, Yun Zhang, Zachary Lochner, Seong-soo Kim, Hyunsoo Kim, Jae-Hyun Ryou, Shyh-Chiang Shen, P. Doug Yoder, Russell D. Dupuis, Qiyuan Wei, Kewei Sun, Alec Fischer, Fernando Ponce, "Performance improvement of InGaN-based laser diodes by epitaxial layer structure design", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760219 (17 March 2010); doi: 10.1117/12.842334; https://doi.org/10.1117/12.842334
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