12 March 2010 Realization of high-efficiency AlGaN-based ultraviolet light emitters
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Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 76021F (2010); doi: 10.1117/12.841550
Event: SPIE OPTO, 2010, San Francisco, California, United States
We have reported the growth and characterization of quaternary AlGaInN bulk layer and AlGaInN/InGaN MQWs grown by metal-organic chemical vapor deposition (MOCVD) for high efficiency ultraviolet light-emitting diodes. The inclusion of the small fraction of the indium in AlGaInN layer was found to lead a fewer structural defects and reduction of strain in the layer. From the temperature dependent photoluminescence (TDPL) and time-resolved PL (TRPL), the internal quantum efficiency at 300K was obtained as 60 % for sample grown with quaternary AlGaInN barrier in MQWs and 25 % for the sample with ternary AlGaN barrier. It was resulted that the dominant optical transition in AlGaInN/InGaN MQWs was due to localized exciton recombination and reduction of strain in the QW stack with indium incorporation in the barriers, resulting the longest decay lifetime from quaternary AlGaInN alloys. We measured the optical output power from the UV LED device grown with quaternary AlGaInN barriers.
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Seong-Ran Jeon, Sung-Jai Lee, In-Ki Kang, Jai Bum Kim, Nam Hwang, Sung-Jin Son, "Realization of high-efficiency AlGaN-based ultraviolet light emitters", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76021F (12 March 2010); doi: 10.1117/12.841550; https://doi.org/10.1117/12.841550


Ultraviolet light emitting diodes

Ultraviolet radiation

Chemical species

Gallium nitride

Quantum wells

Internal quantum efficiency

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