16 March 2010 Output power enhancement of light-emitting diodes with defect passivation layer
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Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 76021X (2010) https://doi.org/10.1117/12.841513
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
We demonstrate high efficiency blue light emitting diodes with defect passivation layers. The defect passivation layers were formed by defect selective wet etching, SiO2 deposition, and chemical mechanical polishing process. The process does not require photolithography patterning. The threading dislocation density of grown sample was reduced down to ~4×107 cm-2. The defect passivated epi-wafer is used to grow light emitting diode (LED) and the output power of the fabricated chip is enhanced by 45% at 20 mA compared to a reference one without using defect passivation.
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Ming-Hua Lo, Ming-Hua Lo, Po-Min Tu, Po-Min Tu, Yuh-Jen Cheng, Yuh-Jen Cheng, Chao-Hsun Wang, Chao-Hsun Wang, Cheng-Wei Hung, Cheng-Wei Hung, Shih-Chieh Hsu, Shih-Chieh Hsu, Hao-Chung Kuo, Hao-Chung Kuo, Hsiao-Wen Zan, Hsiao-Wen Zan, Shing-Chung Wang, Shing-Chung Wang, Chun-Yen Chang, Chun-Yen Chang, Che-Ming Liu, Che-Ming Liu, } "Output power enhancement of light-emitting diodes with defect passivation layer", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76021X (16 March 2010); doi: 10.1117/12.841513; https://doi.org/10.1117/12.841513
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