16 March 2010 Comparison of different template structures for high quality and self-separation thick GaN growth
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Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 760221 (2010) https://doi.org/10.1117/12.846513
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
Two different template structures of dot air-bridges and nanorods were used for 300 µm GaN growth by hydride vapor phase epitaxy (HVPE). The selective growth of arrays of dot air-bridges and nanorods whose sidewalls coated with SiO2 are identified and exploited to form a compliant layer to decouple the impact due to the different thermal expansion and lattice mismatch between 300 µm overgrown GaN layer and the host sapphire substrate. As the process temperature cooling down from 1050 °C to room temperature in HVPE system, the 300 μm freestanding GaN substrates were obtained by the self-separation. The dislocation density was estimated by both the etching pit density method and cathodoluminescence (CL). The dislocation densities of the freestanding bulk GaN were lower than 5×106 and 5×107 cm-2 for the template structure of dot air-bridges and nanorods structure, respectively.
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Yen-Hsiang Fang, Chu-Li Chao, Tung-Wei Chi, Kuei-Ming Chen, Po-Chun Liu, Jenq-Dar Tsay, "Comparison of different template structures for high quality and self-separation thick GaN growth", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760221 (16 March 2010); doi: 10.1117/12.846513; https://doi.org/10.1117/12.846513
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