16 March 2010 Reduction in operating voltage of UV laser diode
Author Affiliations +
Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 760223 (2010) https://doi.org/10.1117/12.843910
Event: SPIE OPTO, 2010, San Francisco, California, United States
We fabricated UV laser diodes (LDs). A high-temperature annealing at 850 °C for a short duration was found to be very effective for reducing the series resistance of an n-type contact. By applying high-temperature annealing, the operating voltage of an UV LD was reduced from 10.7 V to 9.5 V at a forward current of 300 mA.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tomoki Ichikawa, Tomoki Ichikawa, Kenichiro Takeda, Kenichiro Takeda, Yuji Ogiso, Yuji Ogiso, Kengo Nagata, Kengo Nagata, Motoaki Iwaya, Motoaki Iwaya, Satoshi Kamiyama, Satoshi Kamiyama, Hiroshi Amano, Hiroshi Amano, Isamu Akasaki, Isamu Akasaki, Harumasa Yoshida, Harumasa Yoshida, Masakazu Kuwabara, Masakazu Kuwabara, Yoji Yamashita, Yoji Yamashita, Hirofumi Kan, Hirofumi Kan, "Reduction in operating voltage of UV laser diode", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760223 (16 March 2010); doi: 10.1117/12.843910; https://doi.org/10.1117/12.843910


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