11 March 2010 Analysis and comparison of UV photodetectors based on wide bandgap semiconductors
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Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 760225 (2010); doi: 10.1117/12.849460
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
Performance, advantages and drawbacks of GaN- and SiC-based ultraviolet (UV) photodetectors are analyzed and compared. This includes metal-semiconductor-metal photodetectors, p-i-n photodiodes and avalanche photodiodes. Design, process and characterization of these devices are described. Fabricated p-i-n InGaN/GaN quantum well photodetectors are shown to exhibit a quantum efficiency of about 50% at 365 nm with a peak ultraviolet to visible rejection ratio more than 3 orders of magnitude. A novel SiC avalanche photodiode design is shown to produce stable avalanche breakdown characteristics for devices up to 2mm in diameter. A significant increase of its photo responsivity is also demonstrated when the avalanche voltage is applied.
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Qin Wang, Susan Savage, Bertrand Noharet, Ingemar Petermann, Sirpa Persson, Susanne Almqvist, Mietek Bakowski, Jan Y. Andersson, "Analysis and comparison of UV photodetectors based on wide bandgap semiconductors", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760225 (11 March 2010); doi: 10.1117/12.849460; https://doi.org/10.1117/12.849460
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KEYWORDS
Ultraviolet radiation

Photodetectors

Silicon carbide

Sensors

Gallium nitride

Quantum efficiency

Avalanche photodetectors

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