15 February 2010 Growth and characterization of ZnO-based buffer layers for CIGS solar cells
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Proceedings Volume 7603, Oxide-based Materials and Devices; 76030D (2010) https://doi.org/10.1117/12.846351
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
ZnO-based compounds are of interest as buffer layers in Cu(In,Ga)Se2 (CIGS) solar cells, due to the ability to change the electrical and optical properties of ZnO by addition of other elements. The device structure of a CIGS solar cell is; soda-lime glass/Mo/CIGS/buffer layer/ZnO/ZnO:Al. This contribution treats growth and characterization of Zn1-xMgxO and Zn(O,S) on glass substrates and as buffer layers in CIGS solar cell devices. The ZnO-based compounds are grown by atomic layer deposition at deposition temperatures below 200 °C using metal-organic precursors.
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T. Törndahl, A. Hultqvist, C. Platzer-Björkman, M. Edoff, "Growth and characterization of ZnO-based buffer layers for CIGS solar cells", Proc. SPIE 7603, Oxide-based Materials and Devices, 76030D (15 February 2010); doi: 10.1117/12.846351; https://doi.org/10.1117/12.846351
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