Band gap engineering of ZnO for high efficiency CIGS based solar cells

Charlotte Platzer-Björkman; Adam Hultqvist; Jonas Pettersson; Tobias Törndahl

doi:10.1117/12.846017

15 February 2010 Band gap engineering of ZnO for high efficiency CIGS based solar cells

Charlotte Platzer-Björkman, Adam Hultqvist, Jonas Pettersson, Tobias Törndahl

Proceedings Volume 7603, Oxide-based Materials and Devices; 76030F (2010) https://doi.org/10.1117/12.846017
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Thin film solar cells based on Cu(In,Ga)Se₂, called CIGS, is one of the most promising technologies for low cost, high efficiency photovoltaics. The CIGS device is composed of four layers; molybdenum back contact, CIGS p-type absorber, n-type buffer layer and doped ZnO top contact. The most common buffer layer is CdS, however it is desirable to find a Cd-free, large band gap alternative. In this paper, the use of ZnO-based buffer layers deposited by atomic layer deposition, ALD is described. Efficiencies of over 18% are shown by using Zn(O,S) or (Zn,Mg)O by ALD followed by sputtered ZnO:Al. The role of the conduction band alignment across the heterojunction is discussed, and results for large band gap CuGaSe₂ absorbers are presented. In addition, light-soaking effects for devices with (Zn,Mg)O-based buffer layers are related to measurements of persistent photoconductivity of ALD-(Zn,Mg)O thin films.

Citation Download Citation

Charlotte Platzer-Björkman, Adam Hultqvist, Jonas Pettersson, and Tobias Törndahl "Band gap engineering of ZnO for high efficiency CIGS based solar cells", Proc. SPIE 7603, Oxide-based Materials and Devices, 76030F (15 February 2010); https://doi.org/10.1117/12.846017

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