15 February 2010 Band gap engineering of ZnO for high efficiency CIGS based solar cells
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Proceedings Volume 7603, Oxide-based Materials and Devices; 76030F (2010) https://doi.org/10.1117/12.846017
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
Thin film solar cells based on Cu(In,Ga)Se2, called CIGS, is one of the most promising technologies for low cost, high efficiency photovoltaics. The CIGS device is composed of four layers; molybdenum back contact, CIGS p-type absorber, n-type buffer layer and doped ZnO top contact. The most common buffer layer is CdS, however it is desirable to find a Cd-free, large band gap alternative. In this paper, the use of ZnO-based buffer layers deposited by atomic layer deposition, ALD is described. Efficiencies of over 18% are shown by using Zn(O,S) or (Zn,Mg)O by ALD followed by sputtered ZnO:Al. The role of the conduction band alignment across the heterojunction is discussed, and results for large band gap CuGaSe2 absorbers are presented. In addition, light-soaking effects for devices with (Zn,Mg)O-based buffer layers are related to measurements of persistent photoconductivity of ALD-(Zn,Mg)O thin films.
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Charlotte Platzer-Björkman, Adam Hultqvist, Jonas Pettersson, Tobias Törndahl, "Band gap engineering of ZnO for high efficiency CIGS based solar cells", Proc. SPIE 7603, Oxide-based Materials and Devices, 76030F (15 February 2010); doi: 10.1117/12.846017; https://doi.org/10.1117/12.846017
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