15 February 2010 Lattice location of the group V elements Sb, As, and P in ZnO
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Proceedings Volume 7603, Oxide-based Materials and Devices; 76030K (2010) https://doi.org/10.1117/12.846097
Event: SPIE OPTO, 2010, San Francisco, California, United States
Modifying the properties of ZnO by means of incorporating antimony, arsenic or phosphorus impurities is of interest since these group V elements have been reported in the literature among the few successful p-type dopants in this technologically promising II-VI compound. The lattice location of ion-implanted Sb, As, and P in ZnO single crystals was investigated by means of the electron emission channeling technique using the radioactive isotopes 124Sb, 73As and 33P and it is found that they preferentially occupy substitutional Zn sites while the possible fractions on substitutional O sites are a few percent at maximum. The lattice site preference is understandable from the relatively large ionic size of the heavy mass group V elements. Unfortunately the presented results cannot finally settle the interesting issue whether substitutional Sb, As or P on oxygen sites or SbZn-2VZn, AsZn-2VZn or PZn-2VZn complexes (as suggested in the literature) are responsible for the acceptor action. However, the fact that the implanted group V ions prefer the substitutional Zn sites is clearly a strong argument in favour of the complex acceptor model, while it discourages the notion that Sb, As and P act as simple "chemical" acceptors in ZnO.
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Ulrich Wahl, Ulrich Wahl, João Guilherme Correia, João Guilherme Correia, Tânia Mendonça, Tânia Mendonça, Stefan Decoster, Stefan Decoster, } "Lattice location of the group V elements Sb, As, and P in ZnO", Proc. SPIE 7603, Oxide-based Materials and Devices, 76030K (15 February 2010); doi: 10.1117/12.846097; https://doi.org/10.1117/12.846097


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