Review on optical and electrical properties of oxide semiconductors

Dong Lim Kim; Hyun Jae Kim

doi:10.1117/12.846661

15 February 2010 Review on optical and electrical properties of oxide semiconductors

Dong Lim Kim, Hyun Jae Kim

Proceedings Volume 7603, Oxide-based Materials and Devices; 760313 (2010) https://doi.org/10.1117/12.846661
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Oxide semiconductors became one of the potential elements for large area electronics such as a channel for thin film transistors. Optical and electrical properties were modified by alloying or doping of several oxide materials; In₂O₃, ZnO, Ga₂O₃, and SnO₂. The excellent properties achieved at the ternary or quaternary alloys could be explained by the role of each materials as a carrier controller, a conduction path, and etc. The metal oxide semiconductors were generally deposited by vacuum process but recently, alternative ways, like a sol-gel or an ink-jet printing, are suggested. In this review, diverse approaches on oxide semiconductors are shown, and an in-depth discussion of the optical and electrical properties alternation in metal oxide alloy fabricated by various methods is given.

Citation Download Citation

Dong Lim Kim and Hyun Jae Kim "Review on optical and electrical properties of oxide semiconductors", Proc. SPIE 7603, Oxide-based Materials and Devices, 760313 (15 February 2010); https://doi.org/10.1117/12.846661

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