Paper
15 February 2010 Oxide thin film transistors on novel flexible substrates
S. J. Pearton, Wantae Lim, Erica Douglas, Fan Ren, Young Woo Heo, D. P. Norton
Author Affiliations +
Proceedings Volume 7603, Oxide-based Materials and Devices; 760315 (2010) https://doi.org/10.1117/12.844935
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
Enhancement-mode TFTs based on amorphous InGaZnO channel were fabricated on paper, glass or plastic substrates at low temperature (< 100°C). The TFTs operated in enhancement mode and showed low operating voltages of 0.5-2.5 V, drain current on-to-off ratios of ~ 105, sub-threshold gate-voltage swing of 0.25-0.5 V.decade-1, and high saturation mobilities of 5-12 cm2.V-1.s-1. The devices exhibited small shifts during 1000 hours aging time at room temperature. Significant challenges remain, including improving the stability of the devices under bias, lowering the operating voltages, replacing metal contacts with conducting polymers that should be more resistant to cracking on rolling-up of flexible substrates and developing large-area printing processes that are compatible with manufacturing these devices on very large areas.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. J. Pearton, Wantae Lim, Erica Douglas, Fan Ren, Young Woo Heo, and D. P. Norton "Oxide thin film transistors on novel flexible substrates", Proc. SPIE 7603, Oxide-based Materials and Devices, 760315 (15 February 2010); https://doi.org/10.1117/12.844935
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Cited by 3 scholarly publications.
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KEYWORDS
Transistors

Oxides

Thin films

Glasses

Dielectrics

Zinc oxide

Oxygen

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