2 March 2010 Thin film transistors with wurtzite ZnO channels grown on Si3N4/SiO2/Si (111) substrates by pulsed laser deposition
Author Affiliations +
Proceedings Volume 7603, Oxide-based Materials and Devices; 760318 (2010) https://doi.org/10.1117/12.848512
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
Thin Film Transistors (TFT) were made by growing ZnO on Si3N4/SiO2/Si (111) substrates by pulsed laser deposition. X-ray diffraction and scanning electron microscope studies revealed the ZnO to have a polycrystalline wurtzite structure with a smooth surface, good crystallographic quality and a strong preferential c-axis orientation. Transmission studies in similar ZnO layers on glass substrates showed high transmission over the whole visible spectrum. Electrical measurements of a back gate geometry FET showed an enhancement-mode response with hard saturation, mA range Id and a VON ~ 0V. When scaled down, such TFTs may be of interest for high frequency applications.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. J. Rogers, D. J. Rogers, V. E. Sandana, V. E. Sandana, F. Hosseini Teherani, F. Hosseini Teherani, M. Razeghi, M. Razeghi, } "Thin film transistors with wurtzite ZnO channels grown on Si3N4/SiO2/Si (111) substrates by pulsed laser deposition", Proc. SPIE 7603, Oxide-based Materials and Devices, 760318 (2 March 2010); doi: 10.1117/12.848512; https://doi.org/10.1117/12.848512
PROCEEDINGS
5 PAGES


SHARE
Back to Top