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23 February 2010 Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates
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Proceedings Volume 7603, Oxide-based Materials and Devices; 76031D (2010)
Event: SPIE OPTO, 2010, San Francisco, California, United States
InGaN/GaN layers were grown on ZnO-buffered Si (111) substrates by metalorganic vapour phase epitaxy (MOVPE). The dissociation of ZnO observed during conventional MOVPE growth of InGaN/GaN was combated through the use of a low pressure/temperature MOVPE approach with N2 as a carrier gas and dimethylhydrazine added to the ammonia (nitrogen precursor) in order to enhance the concentration of atomic nitrogen at relatively low temperature. Electron Microscopy of cross-sections, High Resolution X-Ray Diffraction (HR-XRD), secondary ion mass spectroscopy and cathodoluminescence studies suggested that single phase wurtzite InGaN layers with between about 17.5 and 21.5% indium were grown epitaxially, with no evidence of back-etching of the ZnO templates. HR-XRD revealed highly pronounced c-axis texture for both the InGaN/GaN and ZnO. Immersion in dilute nitric acid dissolved the ZnO such that the InGaN/GaN could be lifted-off from the substrate.
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A. Ougazzaden, D. J. Rogers, F. Hosseini Teherani, G. Orsal, T. Moudakir, S. Gautier, V. E. Sandana, F. Jomard, M. Abid, M. Molinari, M. Troyon, P. L. Voss, D. McGrouther, and J. N. Chapman "Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates", Proc. SPIE 7603, Oxide-based Materials and Devices, 76031D (23 February 2010);

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