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15 February 2010 Post-annealing of p-type ZnO:Sb thin film grown by pulsed laser deposition
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Proceedings Volume 7603, Oxide-based Materials and Devices; 76031R (2010)
Event: SPIE OPTO, 2010, San Francisco, California, United States
We present the effect of post-annealing on the p-type ZnO:Sb thin film. The ZnO:Sb thin films were grown by pulsed laser deposition (PLD) method. Undoped ZnO thin film was inserted between the ZnO:Sb thin films and GaN template/sapphire substrate to reduce lattice mismatch. The ZnO:Sb thin films grown in the temperature range of 400 °C and 800 °C were all n-type in the as-grown state. However, when post-annealing was performed the film grown at 600 °C and annealed at 700 °C for 60 min showed p-type conductivity with a hole concentration of 1.4 x 1017 cm-3 and a reasonable mobility of 6.7 cm2/Vs. The annealed ZnO:Sb thin film grown at a relatively low temperature of 400 °C was highly resistive with a resistivity of 1.95 x 105 Ωcm. This was perhaps due to the low incorporation of Sb in the film. ZnO:Sb thin film grown at a relatively high temperature of 800 °C showed n-type conductivity even after annealing, and the carrier concentration only dropped from 1.32 x 1017 cm-3 of the as-grown state to 3.08 x 1015 cm-3 after annealing. This may have been due to the formation of Sb compound in ZnO inhibiting the activation of Sb during post-annealing. Therefore, post-annealing of ZnO:Sb grown at adequate temperature is crucial to obtain p-type ZnO thin film.
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Y. Yata, T. Sakano, and M. Obara "Post-annealing of p-type ZnO:Sb thin film grown by pulsed laser deposition", Proc. SPIE 7603, Oxide-based Materials and Devices, 76031R (15 February 2010);

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