15 February 2010 Physical properties of MgZnO film grown by RF magnetron sputtering using ZnO/MgO (80/20 wt%) target
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Proceedings Volume 7603, Oxide-based Materials and Devices; 76031V (2010) https://doi.org/10.1117/12.842643
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
This work investigates the physical properties of the MgxZn1-xO films. MgxZn1-xO films were deposited by RF magnetron sputtering system using a 6 inch ZnO/MgO (80/20 wt%) target. The XPS, Hall measurement, and transparent performance are measured. The XPS results show that there is high Carbon element content on the surface of MgxZn1-xO maybe due to the contamination and the average of the Mg content is about 25 at. %. The XRD results indicate that the appearance of only (111) peaks for as-grown MgxZn1-xO film is a sign of the cubic single phase. In this study, the MgxZn1-xO film show high transparency with transmittances over 90 % in the visible region (400 ~ 700nm) and the sharp absorption edge is visible in UV region due to the Mg content. Therefore, the Hall measurement of MgxZn1-xO films which were deposited at lower RF power show the higher doping concentration, the lower resistivity and higher mobility as a function of the annealing temperatures. The experimental results indicate that MgxZn1-xO film with 800 °C annealing contains more oxygen vacancies which play the role of donor. Since oxygen vacancies generate states in the band gap and cause an increase in conductivity.
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Kuang-Po Hsueh, Chun-Ju Tun, Hsien-Chin Chiu, "Physical properties of MgZnO film grown by RF magnetron sputtering using ZnO/MgO (80/20 wt%) target", Proc. SPIE 7603, Oxide-based Materials and Devices, 76031V (15 February 2010); doi: 10.1117/12.842643; https://doi.org/10.1117/12.842643
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