15 February 2010 Selective co-doped erbium Ti:LiNbO3 waveguide amplifiers
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Proceedings Volume 7605, Optoelectronic Integrated Circuits XII; 76050L (2010) https://doi.org/10.1117/12.845923
Event: SPIE OPTO, 2010, San Francisco, California, United States
The aim of this work was to demonstrate the fabrication and characterization of erbium-doped optical waveguide amplifiers in X-cut Y-propagating lithium niobate (LiNbO3) by erbium (Er) and titanium (Ti) co-diffusion. Optical small-signal internal gains up to +0.6 dB/cm at 1531 nm were measured for the transverse electric (TE) and magnetic (TM) modes by optical pumping at 1488 nm with a coupled optical pump power of 95 mW in four different optical waveguide amplifier lengths. The Er and Ti co-diffusion process has shown adequate internal gain efficiency in dB/mW and a beneficial path for the development of LiNbO3-based integrated optical devices.
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Rafael Salas-Montiel, Rafael Salas-Montiel, Mehmet E. Solmaz, Mehmet E. Solmaz, Wee Chong Tan, Wee Chong Tan, Xiaomin Song, Xiaomin Song, William T. Snider, William T. Snider, Christi K. Madsen, Christi K. Madsen, } "Selective co-doped erbium Ti:LiNbO3 waveguide amplifiers", Proc. SPIE 7605, Optoelectronic Integrated Circuits XII, 76050L (15 February 2010); doi: 10.1117/12.845923; https://doi.org/10.1117/12.845923

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