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12 February 2010 InP overgrowth on SiO2 for active photonic devices on silicon
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Proceedings Volume 7606, Silicon Photonics V; 760602 (2010) https://doi.org/10.1117/12.841181
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
Integration of III-V materials on silicon wafer for active photonic devices have previously been achieved by growing thick III-V layers on top of silicon or by bonding the III-V stack layers onto a silicon wafer. Another way is the epitaxial lateral overgrowth (ELOG) of a thin III-V material from a seed layer directly on the silicon wafer, which can be used as a platform for the growth of active devices. As a prestudy, we have investigated lateral overgrowth of InP by Hydride Vapor Phase Epitaxy (HVPE) over SiO2 masks of different thickness on InP substrates from openings in the mask. Openings which varied in direction, width and separation were made with E-beam lithography allowing a good dimension control even for nano-sized openings (down to 100 nm wide). This mimics overgrowth of InP on top of SiO2/Si waveguides. By optimizing the growth conditions in terms of growth temperature and partial pressure of the source gases with respect to the opening direction, separation and width, we show that a thin (~200 nm) layer of InP with good morphology and crystalline quality can be grown laterally on top of SiO2. Due to the thin grown InP layer, amplification structures on top of it can be well integrated with the underlying silicon waveguides. The proposed ELOG technology provides a promising integration platform for hybrid InP/silicon active devices.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carl Junesand, Zhechao Wang, Lech Wosinski, and Sebastian Lourdudoss "InP overgrowth on SiO2 for active photonic devices on silicon", Proc. SPIE 7606, Silicon Photonics V, 760602 (12 February 2010); https://doi.org/10.1117/12.841181
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