16 February 2010 High speed silicon optical modulator
Author Affiliations +
Proceedings Volume 7606, Silicon Photonics V; 76060O (2010) https://doi.org/10.1117/12.841092
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
Silicon optical modulators have generated an increasing interest in the recent years, as their performances are crucial to achieve high speed optical links. Their evolutions are presented, from the first demonstrations to the latest developments on optical modulators integrated in waveguides. Among possibilities to achieve optical modulation in silicon-based materials, the carrier depletion effect has demonstrated good performances. Recent results on high speed and low loss silicon optical modulator are presented. Free carrier-concentration-variation effect is used in PIN diode. Carriers are depleted when the diode is reverse biased, leading to refractive index variations. This device presents a low capacitance which allows the reduction of RC time constant and power consumption. A Mach-Zehnder interferometer with few mm-long phase shifter is used to convert the effective index variation into intensity modulation. Performance comparison between PN, PIN and PIPIN diodes are discussed and characteristics of PIPIN diodes are presented.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Delphine Marris-Morini, Delphine Marris-Morini, Gilles Rasigade, Gilles Rasigade, Laurent Vivien, Laurent Vivien, Paul Crozat, Paul Crozat, Eric Cassan, Eric Cassan, Philippe Lyan, Philippe Lyan, Pierrette Rivallin, Pierrette Rivallin, Jean-Marc Fédéli, Jean-Marc Fédéli, } "High speed silicon optical modulator", Proc. SPIE 7606, Silicon Photonics V, 76060O (16 February 2010); doi: 10.1117/12.841092; https://doi.org/10.1117/12.841092
PROCEEDINGS
10 PAGES


SHARE
Back to Top