16 February 2010 Design of Ge/SiGe quantum-confined Stark effect modulators for CMOS compatible photonics
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Proceedings Volume 7606, Silicon Photonics V; 76060Q (2010) https://doi.org/10.1117/12.843223
Event: SPIE OPTO, 2010, San Francisco, California, United States
A simulation technique for modeling optical absorption in Ge/SiGe multiple quantum well (MQW) heterostructures is described, based on a combined 6 × 6 k • p hole wave-function a one-band effective mass electron wavefunction calculation. Using this model, we employ strain engineering to target a specific applications-oriented wavelength, namely 1310 nm, and arrive at a design for a MQW structure to modulate light at this wavelength. The modal confinement in a proposed device is then found using finite-element modeling, and we estimate the performance of a proposed waveguide-integrated electroabsorption modulator.
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Leon Lever, Leon Lever, Zoran Ikonić, Zoran Ikonić, Alex Valavanis, Alex Valavanis, Robert W. Kelsall, Robert W. Kelsall, } "Design of Ge/SiGe quantum-confined Stark effect modulators for CMOS compatible photonics", Proc. SPIE 7606, Silicon Photonics V, 76060Q (16 February 2010); doi: 10.1117/12.843223; https://doi.org/10.1117/12.843223

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