Using reach-through techniques to improve the external power efficiency of silicon CMOS light emitting devices

Monuko du Plessis; Petrus J. Venter; Alfons W. Bogalecki

doi:10.1117/12.840646

16 February 2010 Using reach-through techniques to improve the external power efficiency of silicon CMOS light emitting devices

Monuko du Plessis, Petrus J. Venter, Alfons W. Bogalecki

Author Affiliations +

Proceedings Volume 7606, Silicon Photonics V; 760612 (2010) https://doi.org/10.1117/12.840646
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

For CMOS silicon-based light emitting devices to become practical the external power efficiency must be increased. In this paper a reach-through technique is described whereby the external power efficiency can be increased as a result of three phenomena: i) increase in internal quantum efficiency, ii) increase in light extraction efficiency, and iii) lower operating voltage. The three techniques are discussed and the factor 7 improvement in external power efficiency will be described in terms of the electrical characteristics as well as the external radiation patterns.

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Monuko du Plessis, Petrus J. Venter, and Alfons W. Bogalecki "Using reach-through techniques to improve the external power efficiency of silicon CMOS light emitting devices", Proc. SPIE 7606, Silicon Photonics V, 760612 (16 February 2010); https://doi.org/10.1117/12.840646

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