16 February 2010 Silicon radiative cooler and optical amplifier by light down conversion
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Proceedings Volume 7606, Silicon Photonics V; 760617 (2010) https://doi.org/10.1117/12.840912
Event: SPIE OPTO, 2010, San Francisco, California, United States
Primary challenges in Si science and technology are centered on active device engineering issues with the impact made at their photonic characteristics and applications. Low cost and mature Si technology is driving force toward making optoelectronic devices like LEDs, lasers, modulator, wavelength converter, to name a few. However, to fully exploit tremendous potential of these Si-based devices, which are not as efficient as their III-V-based counterparts, external cooling units are required. In this work, we present a first step towards experimental realizing radiative cooling in Si. The fundamentals behind this approach are in the light down-conversion process through thermal emission that releases the energy from the cooling element in the form of multiple intraband red-shifted photons when it is pumped with interband incoherent light. We demonstrate that a large-area Si wafer kept in an evacuated chamber becomes net cooled by >3.0 K starting from 470 K or demonstrates power conversion efficiency of >100% when pumped with 1.06-μm light. One of other attractive attributes of the device is that it can be easy integrated with other silicon photonic components. We also discuss the way toward further improvement of the performance of these devices.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. K. Malyutenko, V. V. Bogatyrenko, O. Yu. Malyutenko, "Silicon radiative cooler and optical amplifier by light down conversion", Proc. SPIE 7606, Silicon Photonics V, 760617 (16 February 2010); doi: 10.1117/12.840912; https://doi.org/10.1117/12.840912


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