16 February 2010 Light emission from Si LED controlling by a gate voltage and SOS tunneling junction
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Proceedings Volume 7606, Silicon Photonics V; 760619 (2010) https://doi.org/10.1117/12.839927
Event: SPIE OPTO, 2010, San Francisco, California, United States
A novel Si LED with three terminals has been designed and fabricated compatible completely with standard n-well CMOS technology. It is composed by a combination of a forward biased p+-n junction controlling by gate voltage and a poly-Si/ultrathin oxide/Si tunneling junction. The experimental results demonstrates that: (1)The optical emitting power of LED increases with both forward p+-n junction current increasing and positive gate voltage increasing; (2) The optical emitting power of LED still increases with gate Voltage increasing while p+-n junction forward current at zero; (3) The spectra of the optical output power on wavelength λ occurs a peak near 1000nm. The results can be explained from the enhancement on the p-n junction forward current by the gate voltage induced barrier lowering effect and the S(poly-Si)OS tunneling junction theory.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei-Lian Guo, Wei-Lian Guo, Xiao-Yun Li, Xiao-Yun Li, Chun-Hong Huang, Chun-Hong Huang, Xian-Song Fu, Xian-Song Fu, Ping-Juan Niu, Ping-Juan Niu, Guang-Hua Yang, Guang-Hua Yang, } "Light emission from Si LED controlling by a gate voltage and SOS tunneling junction", Proc. SPIE 7606, Silicon Photonics V, 760619 (16 February 2010); doi: 10.1117/12.839927; https://doi.org/10.1117/12.839927

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