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15 February 2010 A compact high-performance germanium photodetector integrated on 0.25μm thick silicon-on-insulator waveguide
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Abstract
We report a very compact (1.6μmx10μm) and low dark current (20nA) Germanium p-i-n photodetector integrated on 0.25μm thick silicon-on-insulator (SOI) waveguides. A thin layer of Germanium was selective-epitaxially grown on top of SOI waveguides. Light is evanescently coupled into Germanium layer from the bottom SOI waveguide. The device demonstrates superior performance with demonstrated responsivity of 0.9A/W and 0.56A/W at wavelength of 1300nm and 1550nm, respectively, and dark current less than 20nA at -0.5V bias. The 3dB bandwidth of the device is measured to be 23GHz at -0.5V bias.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ning-Ning Feng, Shirong Liao, Po Dong, Dawei Zheng, Hong Liang, Cheng-Chih Kung, Roshanak Shafiiha, Dazeng Feng, Guoliang Li, John E. Cunningham, Ashok V. Krishnamoorthy, and Mehdi Asghari "A compact high-performance germanium photodetector integrated on 0.25μm thick silicon-on-insulator waveguide", Proc. SPIE 7607, Optoelectronic Interconnects and Component Integration IX, 760704 (15 February 2010); https://doi.org/10.1117/12.841052
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