15 February 2010 Heterogeneous integration of thin film compound semiconductor lasers and SU8 waveguides on SiO2/Si
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Abstract
We present the heterogeneous integration of a 3.8 μm thick InGaAs/GaAs edge emitting laser that was metal-metal bonded to SiO2/Si and end-fire coupled into a 2.8 μm thick tapered SU8 polymer waveguide integrated on the same substrate. The system was driven in pulsed mode and the waveguide output was captured on an IR imaging array to characterize the mode. The waveguide output was also coupled into a multimode fiber, and into an optical head and spectrum analyzer, indicating lasing at ~997 nm and a threshold current density of 250 A/cm2.
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Sabarni Palit, Sabarni Palit, Jeremy Kirch, Jeremy Kirch, Luke Mawst, Luke Mawst, Thomas Kuech, Thomas Kuech, Nan Marie Jokerst, Nan Marie Jokerst, } "Heterogeneous integration of thin film compound semiconductor lasers and SU8 waveguides on SiO2/Si", Proc. SPIE 7607, Optoelectronic Interconnects and Component Integration IX, 76070I (15 February 2010); doi: 10.1117/12.842379; https://doi.org/10.1117/12.842379
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