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23 February 2010 Life-stress relationship for thin film transistor gate line interconnects on flexible substrates
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Abstract
Change in resistance of interconnect traces on flexible substrates is dependent on material properties and mechanical stress imposed by tensile strain. Dedicated test structures and a mechanical flexing / data collection system were designed and fabricated to collect time to failure data based on cyclic loading to different radii of curvature. We propose a life-stress model based on an inverse power law relationship defining the characteristic life of a Weibull life distribution.
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Thomas Martin and Aris Christou "Life-stress relationship for thin film transistor gate line interconnects on flexible substrates", Proc. SPIE 7607, Optoelectronic Interconnects and Component Integration IX, 760712 (23 February 2010); https://doi.org/10.1117/12.840044
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