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22 January 2010 Recent developments on non-polar cubic group III nitrides for optoelectronic applications
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Abstract
Molecular Beam epitaxy (MBE) of cubic group III-nitrides is a direct way to eliminate polarization effects which inherently limit the performance of optoelectronic devices containing quantum well or quantum dot active regions. In this contribution the latest achievement in the MBE of phase-pure cubic GaN, InN, AlN and their alloys will be reviewed. A new RHEED control technique enables to carefully adjust stoichiometry and to severely reduce the surface roughness, which is important for any hetero-interface. The structural, optical and electrical properties of cubic nitrides and AlGaN/GaN will be presented. We show that no polarization field exists in cubic nitrides and demonstrate intersubband absorption at 1.55 μm in cubic AlN/GaN superlattices. Further the progress towards the fabrication of cubic GaN/AlGaN superlattices for terahertz applications will be discussed.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. J. As "Recent developments on non-polar cubic group III nitrides for optoelectronic applications", Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76080G (22 January 2010); https://doi.org/10.1117/12.846846
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