22 January 2010 Growth of heterostructured III-V nanowires by molecular beam epitaxy for photonic applications
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Abstract
We report the results on the growth, structural and optical characterization of single wurtzite (WZ) GaAs nanowires as well as WZ GaAs/AlGaAs core-shell nanowires with ZB GaAsSb inserts. For the GaAs/GaAsSb heterojunction both the crystal material and crystal phase change plays a critical role in the exact band alignment. We show that ZB GaAsSb inserts with both WZ and ZB GaAs barriers can be grown and hence both type I and type II band alignment can be achieved which has large effects on the optical properties of the nanowires. We thus demonstrate that it is possible to engineer the band-structure at a semiconductor heterojunction by modulating the crystal material as well as the crystal phase.
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D. L. Dheeraj, D. L. Dheeraj, H. L. Zhou, H. L. Zhou, A. F. Moses, A. F. Moses, T. B. Hoang, T. B. Hoang, A. T. J. van Helvoort, A. T. J. van Helvoort, B. O. Fimland, B. O. Fimland, H. Weman, H. Weman, } "Growth of heterostructured III-V nanowires by molecular beam epitaxy for photonic applications", Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76081C (22 January 2010); doi: 10.1117/12.847030; https://doi.org/10.1117/12.847030
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