23 January 2010 Polar and semipolar III-nitrides for long wavelength intersubband devices
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Proceedings Volume 7608, Quantum Sensing and Nanophotonic Devices VII; 76081G (2010); doi: 10.1117/12.847027
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
Extending the intersubband transitions in III-nitride nanostructures from near-infrared to longer wavelengths might have significant consequences for critical applications like imaging, remote sensing and mine detection. In this work, we analyze the potential of polar and semipolar AlGaN/GaN technologies for this relevant spectral range.
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E. Monroy, P. K. Kandaswamy, H. Machhadani, A. Wirthmüller, S. Sakr, L. Lahourcade, A. Das, M. Tchernycheva, P. Ruterana, F. H. Julien, "Polar and semipolar III-nitrides for long wavelength intersubband devices", Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76081G (23 January 2010); doi: 10.1117/12.847027; https://doi.org/10.1117/12.847027
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KEYWORDS
Quantum wells

Absorption

Gallium nitride

Laser sintering

Sapphire

Aluminum

Aluminum nitride

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