22 January 2010 Performance analysis of InAs/Ga(In)Sb strained layer superlattice detectors and focal plane arrays
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Abstract
InAS/GaSb-based Type-II Strained-Layer Superlattice detectors (T2SLS) attract increasing interest for the development of high sensitivity large format mid- and long-wavelength infrared focal plane arrays. This paper will discuss the T2SLS detector performance requirements and readout integrated circuit (ROIC) noise levels for several staring array long-wavelength infrared (LWIR) imaging applications at various background levels. It will show a calculation of the dark current originated by various mechanisms and dependence on the minority carrier lifetime. Advanced heterojunction-based designs in T2SLS detector material have already demonstrated LWIR detectors with sufficient performance for tactical applications and potential for strategic applications. However, significant research is needed to suppress surface leakage current in order to reproduce performances at pixel levels of T2SLS focal plane arrays.
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Sumith V. Bandara, Sumith V. Bandara, } "Performance analysis of InAs/Ga(In)Sb strained layer superlattice detectors and focal plane arrays", Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76081M (22 January 2010); doi: 10.1117/12.835430; https://doi.org/10.1117/12.835430
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