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22 January 2010 High-operating temperature MWIR photon detectors based on type II InAs/GaSb superlattice
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Recent efforts have been paid to elevate the operating temperature of Type II InAs/GaSb superlattice Mid Infrared photon detectors. Optimized growth parameters and interface engineering technique enable high quality material with a quantum efficiency above 50%. Intensive study on device architecture and doping profile has resulted in almost one order of magnitude of improvement to the electrical performance and lifted up the 300K-background BLIP operation temperature to 166K. At 77K, the ~4.2 μm cut-off devices exhibit a differential resistance area product in excess of the measurement system limit (106 Ohm.cm2) and a detectivity of 3x1013cm.Hz1/2/W. High quality focal plane arrays were demonstrated with a noise equivalent temperature of 10mK at 77K. Uncooled camera is capable to capture hot objects such as soldering iron.
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Manijeh Razeghi, Binh-Minh Nguyen, Pierre-Yves Delaunay, Siamak Abdollahi Pour, Edward Kwei-wei Huang, Paritosh Manukar, Simeon Bogdanov, and Guanxi Chen "High-operating temperature MWIR photon detectors based on type II InAs/GaSb superlattice", Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76081Q (22 January 2010); doi: 10.1117/12.840422;

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